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A Product Line of Diodes Incorporated
DMC2020USD
20V COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Product Summary
ID Max Device V(BR)DSS RDS(on) max TA = 25C (Notes 3 & 5) 20m @ VGS = 4.5V Q1 20V 28m @ VGS = 2.5V 33m @ VGS = -4.5V Q2 -20V 45m @ VGS = -2.5V -5.8A 7.2A -6.8A 8.5A
Features and Benefits
* * * * * * * * Reduced footprint with two discretes in a single SO8 Low gate drive Low input capacitance Fast Switching Speed Low Input/Output Leakage ESD Protected up to 2kV "Lead Free", RoHS Compliant (Note 1) Halogen and Antimony Free. "Green" Device (Note 1)
Mechanical Data
* * * * * * Case: SO-8 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals Connections: See Diagram Terminals: Finish - Matte Tin annealed over Copper lead frame. Solderable per MIL-STD-202, Method 208 Weight: 0.074 grams (approximate)
Description and Applications
This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. * * * * Motor control DC-DC Converters Power management functions Notebook Computers and Printers
D1
SO-8
D2
S1 G1 S2 G2
ESD PROTECTED TO 2kV
D1 D1 G1 D2 D2
Top View
G2 S1
Q1 N-Channel
Equivalent Circuit
S2
Q2 P-Channel
Top View
Ordering Information (Note 1)
Product DMC2020USD-13
Notes:
Marking C2020UD
Reel size (inches) 13
Tape width (mm) 12
Quantity per reel 2,500
1. No purposefully added lead. Diodes Inc.'s "Green" policy and packaging details can be found on our website at http://www.diodes.com.
Marking Information
C2020UD YY WW
= Manufacturer's Marking C2020UD = Product Type Marking Code YYWW = Date Code Marking YY = Year (ex: 09 = 2009) WW = Week (01 - 53)
DMC2020USD
Document number: DS32121 Rev. 3 - 2
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DMC2020USD
Maximum Ratings @TA = 25C unless otherwise specified
Characteristic Drain-Source Voltage Gate-Source Voltage (Notes 3 & 5) Continuous Drain Current VGS = 4.5V TA = 70C (Notes 3 & 5) (Notes 2 & 5) (Notes 2 & 6) (Notes 4 & 5) (Notes 3 & 5) (Notes 4 & 5) ID Symbol VDSS VGSS N-Channel - Q1 20 10 8.5 6.8 6.5 7.8 33.6 4.0 33.6 P-Channel - Q2 -20 10 -6.8 -5.4 -5.2 -6.3 -26.8 -4.0 -26.8 A Units V
Pulsed Drain Current
VGS = 4.5V
IDM IS ISM
Continuous Source Current (Body diode) Pulsed Source Current (Body diode)
Thermal Characteristics @TA = 25C unless otherwise specified
Characteristic (Notes 2 & 5) Power Dissipation Linear Derating Factor (Notes 2 & 6) (Notes 3 & 5) (Notes 2 & 5) (Notes 2 & 6) (Notes 3 & 5) (Notes 5 & 7) PD Symbol N-Channel - Q1 P-Channel - Q2 1.25 10 1.8 14.3 2.14 17.2 RJA RJL TJ, TSTG 100 70 58 51 -55 to +150 C Unit
W mW/C
Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Lead Operating and Storage Temperature Range
Notes:
C/W
2. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is measured when operating in a steady-state condition. 3. Same as note (2), except the device is measured at t 10 sec. 4. Same as note (2), except the device is pulsed with D = 0.02 and pulse width 300s. 5. For a dual device with one active die. 6. For a device with two active die running at equal power. 7. Thermal resistance from junction to solder-point (at the end of the drain lead).
DMC2020USD
Document number: DS32121 Rev. 3 - 2
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Thermal Characteristics
RDS(ON)
RDS(ON)
1
DC 1s 100ms Single Pulse T amb= 25C One active die 10ms 1ms 100us
-ID Drain Current (A)
ID Drain Current (A)
10
Limited
10
Limited
1
DC 1s 100ms Single Pulse T amb= 25C One active die 10ms 1ms 100us
100m
100m
10m 0.1
10m 0.1
1
10
1
10
VDS Drain-Source Voltage (V)
-VDS Drain-Source Voltage (V)
N-channel Safe Operating Area
100 80 60 40
D=0.2 25 mm x 25 mm 1oz FR4 One active die
P-channel Safe Operating Area
2.0
25 mm x 25 mm 1oz FR4
Max Power Dissipation (W)
Thermal Resistance (C/W)
1.5
Two active die One active die
D=0.5
1.0
Single Pulse D=0.05 D=0.1
0.5
20 0 100
0.0 0 25 50 75 100 125 150
1m
10m 100m
1
10
100
1k
Pulse Width (s)
Temperature (C)
Transient Thermal Impedance
Single Pulse T amb= 25C One active die 25 mm x 25 mm 1oz FR4
Derating Curve
Maximum Power (W)
100
10
1 100
1m
10m 100m
1
10
100
1k
Pulse Width (s)
Pulse Power Dissipation
DMC2020USD
Document number: DS32121 Rev. 3 - 2
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Electrical Characteristics - Q1 N-CHANNEL
Characteristic OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS Gate Threshold Voltage Static Drain-Source On-Resistance (Note 8) Forward Transfer Admittance (Notes 8 & 9) Diode Forward Voltage (Note 8) Continuous Source Current DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (Note 10) Total Gate Charge (Note 10) Gate-Source Charge (Note 10) Gate-Drain Charge (Note 10) Turn-On Delay Time (Note 10) Turn-On Rise Time (Note 10) Turn-Off Delay Time (Note 10) Turn-Off Fall Time (Note 10)
Notes:
@TA = 25C unless otherwise specified Min 20 0.5 Typ 1.1 13 18 16 0.7 1149 157 142 1.51 6.0 11.6 2.7 3.4 11.67 12.49 35.89 12.33 Max 1.0 10 1.5 20 28 1.2 1.8 Unit V A A V m S V A Test Condition VGS = 0V, ID = 250A VDS = 20V, VGS = 0V VGS = 10V, VDS = 0V VDS = VGS, ID = 250A VGS = 4.5V, ID = 7A VGS = 2.5V, ID = 3A VDS = 5V, ID = 9.4A VGS = 0V, IS = 1.3A -
Symbol BVDSS IDSS IGSS VGS(th) RDS (ON) |Yfs| VSD IS Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(on) tr tD(off) tf
pF
VDS = 10V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1MHz VGS = 2.5V VGS = 4.5V VDS = 10V ID = 9.4A
nC
ns
VGS = 4.5V, VDS = 10V, RG = 6 , ID = 1A
8. Measured under pulsed conditions. Pulse width 300s; duty cycle 2% 9. For design aid only, not subject to production testing. 10. Switching characteristics are independent of operating junction temperatures.
Typical Characteristics - Q1 N-CHANNEL
30
VGS = 10V VGS = 4.5V VGS = 4.0V
20
25 ID, DRAIN CURRENT (A)
20
VGS = 3.5V VGS = 3.0V
ID, DRAIN CURRENT (A)
15
VDS = 5V
15
VGS = 2.5V
10
10
VGS = 2.0V
T A = 150C
5
TA = 125C TA = 85C TA = 25C TA = -55C
5
VGS = 1.8V
0
0
0.5 1 1.5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics
2
0
0
0.5 1 1.5 2 2.5 VGS, GATE SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristics
3
DMC2020USD
Document number: DS32121 Rev. 3 - 2
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RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
0.04
0.04
VGS = 4.5V
0.03
0.03
0.02
VGS = 2.5V
0.02
T A = 150C TA = 125C T A = 85C T A = 25C T A = -55C
0.01
VGS = 4.5V
0.01
0
0 0 5 10 15 20 ID, DRAIN CURRENT (A) Fig. 4 Typical Drain-Source On-Resistance vs. Drain Current and Temperature
0
5 10 15 20 25 ID, DRAIN-SOURCE CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage
30
1.4
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
1.6
0.04
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED)
0.03
1.2
0.02
VGS = 2.5V ID = 5A
1.0
VGS = 4.5V ID = 10A
0.8
VGS = 2.5V ID = 5A
0.01
VGS = 4.5V ID = 10A
0.6 -50
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Fig. 5 On-Resistance Variation with Temperature
30
0 -50
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Fig. 6 On-Resistance Variation with Temperature
1.6 VGS(TH), GATE THRESHOLD VOLTAGE (V) 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 -50
ID = 250A ID = 1mA
25 IS, SOURCE CURRENT (A)
20
T A = 25C
15
10
5
0 0 0.2 0.4 0.6 0.8 1.0 1.2 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current
-25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature
DMC2020USD
Document number: DS32121 Rev. 3 - 2
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f = 1MHz
IDSS, DRAIN-SOURCE LEAKAGE CURRENT (nA)
10,000
100,000
10,000
C, CAPACITANCE (pF)
1,000
Ciss
1,000
TA = 150C
Coss Crss
T A = 125C
100
100
10
TA = 85C TA = 25C
10 0 8 12 16 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Capacitance 4 20
1 0 5 10 15 20 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 10 Typical Drain-Source Leakage Current vs. Drain-Source Voltage
10
VGS, GATE-SOURCE VOLTAGE (V)
8
VDS = 10V ID = 9.4A
6
4
2
0
0
5 10 15 20 25 Qg, TOTAL GATE CHARGE (nC) Fig. 11 Gate-Source Voltage vs. Total Gate Charge
DMC2020USD
Document number: DS32121 Rev. 3 - 2
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DMC2020USD Electrical Characteristics - Q2 P-CHANNEL
Characteristic OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Static Drain-Source On-Resistance (Note 11) Forward Transfer Admittance (Note 11 & 12) Diode Forward Voltage (Note 11) Continuous Source Current DYNAMIC CHARACTERISTICS (Note 12) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (Note 13) Total Gate Charge (Note 13) Gate-Source Charge (Note 13) Gate-Drain Charge (Note 13) Turn-On Delay Time (Note 13) Turn-On Rise Time (Note 13) Turn-Off Delay Time (Note 13) Turn-Off Fall Time (Note 13)
Notes:
@TA = 25C unless otherwise specified Min -20 -0.4 Typ -0.7 26 33 14 -0.7 1610 157 145 9.45 8.0 15.4 2.5 3.3 16.8 12.4 94.1 42.4 Max -1.0 10 -1.0 33 45 -1.0 -1.8 Unit V A A V m S V A Test Condition VGS = 0V, ID = -250A VDS = -20V, VGS = 0V VGS = 10V, VDS = 0V VDS = VGS, ID = -250A VGS = -4.5V, ID = -6A VGS = -2.5V, ID = -3A VDS = -5V, ID = -4A VGS = 0V, IS = -1A -
Symbol BVDSS IDSS IGSS VGS(th) RDS (ON) |Yfs| VSD IS Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(on) tr tD(off) tf
pF
VDS = -10V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1MHz VGS = -2.5V VDS = -10V ID = -4A VGS = -4.5V
nC
ns
VGS = -4.5V, VDS = -10V, RG = 6 , ID = -1A
11. Measured under pulsed conditions. Pulse width 300s; duty cycle 2% 12. For design aid only, not subject to production testing. 13. Switching characteristics are independent of operating junction temperatures.
Typical Characteristics - Q2 P-CHANNEL
30
VGS = -10V VGS = -3.5V VGS = -3.0V VGS = -4.5V VGS = -4.0V
20
VDS = -5V
25 -ID, DRAIN CURRENT (A)
VGS = -2.0V
20
-ID, DRAIN CURRENT (A)
VGS = -2.5V
15
15
10
10
VGS = -1.8V
5
TA = 150C T A = 125C TA = 85C T A = 25C TA = -55C
5
0 0 0.5 1.0 1.5 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 12 Typical Output Characteristics 2.0
0
0
0.5 1 1.5 2 2.5 -VGS, GATE SOURCE VOLTAGE (V) Fig. 13 Typical Transfer Characteristics
3
DMC2020USD
Document number: DS32121 Rev. 3 - 2
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RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
0.06 0.05
0.06
VGS = 4.5V
0.05
0.04
0.04
TA = 150C TA = 125C
0.03
-VGS = 2.5V -VGS = 4.5V
0.03
TA = 85C TA = 25C
0.02
0.02
TA = -55C
0.01
0.01
0
0
5 10 15 20 25 -ID, DRAIN-SOURCE CURRENT (A) Fig. 14 Typical On-Resistance vs. Drain Current and Gate Voltage
30
0
0
5 10 15 20 -ID, DRAIN CURRENT (A) Fig. 15 Typical Drain-Source On-Resistance vs. Drain Current and Temperature
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
1.6
0.06 0.05
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED)
1.4
0.04
1.2
-VGS = 2.5V -ID = 5A
0.03
-VGS = 4.5V -ID = 10A
1.0
-VGS = 4.5V -ID = 10A
0.02
0.8
-VGS = 2.5V -ID = 5A
0.01
0.6 -50
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Fig. 16 On-Resistance Variation with Temperature
0 -50
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Fig. 17 On-Resistance Variation with Temperature
1.2 VGS(TH), GATE THRESHOLD VOLTAGE (V) 1.0
30
25 -IS, SOURCE CURRENT (A)
0.8
20
TA = 25C
0.6
-I D = 1mA
15
0.4
-I D = 250A
10
0.2
5
-25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (C) Fig. 18 Gate Threshold Variation vs. Ambient Temperature
0 -50
0 0 0.2 0.4 0.6 0.8 1.0 -VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 19 Diode Forward Voltage vs. Current 1.2
DMC2020USD
Document number: DS32121 Rev. 3 - 2
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DMC2020USD
10,000
f = 1MHz
-IDSS, DRAIN-SOURCE LEAKAGE CURRENT (nA)
100,000
10,000
TA = 150C TA = 125C
C, CAPACITANCE (pF)
1,000
Ciss
1,000
Coss
100
TA = 85C
100
Crss
10
10 0 4 8 12 16 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 20 Typical Capacitance 20
1 0
TA = 25C
5 10 15 20 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 21 Typical Drain-Source Leakage Current vs. Drain-Source Voltage
10 -VGS, GATE-SOURCE VOLTAGE (V)
8
VDS = -10V ID = -4A
6
4
2
0
0
10 15 20 25 30 35 Qg, TOTAL GATE CHARGE (nC) Fig. 22 Gate-Source Voltage vs. Total Gate Charge
5
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DMC2020USD Package Outline Dimensions
DIM
Inches Min. Max. 0.069 0.010 0.197 0.244 0.157 0.050
Millimeters Min. 1.35 0.10 4.80 5.80 3.80 0.40 Max. 1.75 0.25 5.00 6.20 4.00 1.27
DIM
h x 45
Inches Min. e b c h Max.
Millimeters Min. Max. 0.51 0.25 8 0.50 -
A A1 D H E L
0.053 0.004 0.189 0.228 0.150 0.016
0.050 BSC 0.013 0.008 0 0.010 0.020 0.010 8 0.020 -
1.27 BSC 0.33 0.19 0 0.25 -
Suggested Pad Layout
1.52 0.060 7.0 0.275 4.0 0.155
0.6 0.024
1.27 0.050
mm inches
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IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright (c) 2010, Diodes Incorporated www.diodes.com
DMC2020USD
Document number: DS32121 Rev. 3 - 2
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